AI Data Center DC Laminated Busbar Customer Short Specification

1. Overview

This product is a high-power laminated DC busbar solution designed for next-generation AI and HPC data center DC architectures, supporting ±400 V and 800 V DC systems and high-power rack applications.

The busbar is optimized for high dv/dt, high transient current, and high power density environments, enabling stable and low-loss DC power delivery while reducing EMI risks in advanced AI power systems.

Product Positioning
This busbar is not a generic interconnection component, but a functional part of the DC power loop in AI data center architectures.

2. Target Applications

· AI / HPC data centers

· DC power distribution architectures (±400 V / 800 V DC)

· High-power AI racks (≥132 kW per rack, scalable to higher power levels)

· Typical installation areas:

o PSU to DC bus

o DC bus to HV IBC

o High-power DC distribution nodes

3. Key Electrical Ratings

Parasitic Performance (System-Critical)

· Main loop parasitic inductance (ESL): ≤ 10 nH (typical design target)

· Closely coupled positive and negative conductors to minimize loop area

This performance target is intended to support SiC and GaN based high-frequency power stages and fast AI load transients.

4. Mechanical & Material Design

Laminated Structure

· Symmetrical laminated structure for positive and negative DC rails

· Compact, low-profile design supporting high power density layouts

· Optimized current paths for stable DC power distribution

Conductor Material

· High-purity copper conductors

· Optional surface finishing:

o Tin plating

o Silver plating

· Designed for low contact resistance and long-term stability

5. Insulation & Safety Design

· High dielectric strength insulation materials

· Low dielectric constant for DC and high dv/dt operation

· Designed for long-term DC stress conditions

Electric field management features include:

· Smooth edge geometry

· Rounded conductor transitions

· Local electric field balancing to reduce:

o Partial discharge risk

o Localized electrical stress

6. SiC / GaN Friendly Design (WBG-Ready)

This busbar is optimized for systems using wide-bandgap power devices (SiC / GaN) and supports:

· High dv/dt and di/dt switching conditions

· Reduced loop inductance to minimize:

o Switching ringing

o EMI generation

· Increased flexibility for:

o Higher switching frequency operation

o DC-link capacitor optimization

7. System-Level Benefits

When applied in AI data center DC architectures, this laminated busbar helps enable:

· Reduced main power loop inductance

· Simplified EMI mitigation and debugging

· Higher overall system power density

· Lower conduction loss and temperature rise

· Improved stability under fast AI workload transients

In simple terms:
It allows high-power DC energy to be delivered cleaner, more stable, and with greater design margin.

8. Reliability & Operating Profile

· Designed for 24/7 continuous operation in data center environments

· Suitable for high utilization and long service life systems

· Reliability philosophy aligned with typical data center infrastructure requirements

9. Customization & Co-Design Approach

· Mechanical and electrical customization available based on customer DC architecture and layout

· Early technical engagement is recommended before layout freeze

· Co-design objective:

o Optimize the DC power loop together with the customer

o Integrate the busbar as a platform-level design element, not a late-stage component

10. Closing Statement

As AI data center power density continues to increase, DC architectures are becoming a fundamental design choice.
This laminated DC busbar solution is intended to provide customers with greater control, stability, and confidence in high-power DC system design.

Optional Footer (Recommended)

_For project-specific electrical ratings, validation targets, and compliance requirements (IEC / UL), please contact __ __our _technical representative.