laminated busbar inductance reduction

Laminated busbar inductance reduction is a focused engineering effort to minimize the parasitic inductance inherent in any conductor. Through deliberate design choices in geometry, layer stacking, and material placement, we can achieve inductances in the nanohenry range, which is critical for modern power semiconductor performance.

Geometric Optimization Techniques: The primary lever for inductance reduction is minimizing the loop area. We achieve this by placing high di/dt loops (like the DC-link capacitor to switch loop) in an overlapping, parallel configuration with minimal dielectric separation. Increasing the overlap area and decreasing the insulation thickness are key geometric drivers.

Strategic Use of Decoupling Integration: We design busbars with dedicated, low-inductance mounting pads for ceramic decoupling capacitors. By placing these capacitors physically closest to the semiconductor terminals within the busbar structure itself, we create an ultra-low inductance local energy reservoir, which is more effective than capacitors mounted remotely on a PCB.

Active laminated busbar inductance reduction is a non-negotiable aspect of high-performance design. By systematically applying geometric and integration principles, we transform a passive interconnect into an active contributor to circuit performance, enabling faster switching, lower losses, and enhanced system reliability.